TI IRFU320

TI · FETs & Power MOSFETs · MPN IRFU320

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage400V
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)8.1pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

400V 3.1A 4V 50W 1.8Ω@10V 1 N-channel N-Channel TO-251AA Single FETs, MOSFETs

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