TI · FETs & Power MOSFETs · MPN IRFU222
No reviews yet — be the first to review TI IRFU222.
| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 3.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 330pF |
| Type | N-Channel |
200V 3.8A 4V 50W 1.2Ω@10V 1 N-channel N-Channel IPAK Single FETs, MOSFETs