TI IRFU220

TI · FETs & Power MOSFETs · MPN IRFU220

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Specifications

Configuration-
Gate Charge(Qg)18nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

200V 4.6A 2V 50W 800mΩ@10V 1 N-channel N-Channel TO-251AA Single FETs, MOSFETs

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