TI IRFR9110

TI · FETs & Power MOSFETs · MPN IRFR9110

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.1A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
RDS(on)1.2Ω
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

100V 3.1A 1.2Ω 1 P-Channel P-Channel DPAK(TO-252AA) Single FETs, MOSFETs

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