TI IRFR422

TI · FETs & Power MOSFETs · MPN IRFR422

No reviews yet — be the first to review TI IRFR422.

Specifications

Configuration-
Gate Charge(Qg)19nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)9.6pF
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)9.6pF
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)350pF

Technical details

500V 2.2A 4V 50W 4Ω@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs

Related FETs & Power MOSFETs