TI IRFPG42

TI · FETs & Power MOSFETs · MPN IRFPG42

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Specifications

Gate Charge(Qg)120nC@10V
Drain to Source Voltage1kV
Current - Continuous Drain(Id)3.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)4.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

1kV 3.9A 4V 150W 4.2Ω@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

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