TI IRFP462

TI · FETs & Power MOSFETs · MPN IRFP462

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Specifications

Gate Charge(Qg)190nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)480pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.1nF
TypeN-Channel

Technical details

500V 17A 4V 250W 350mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

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