TI IRFP451

TI · FETs & Power MOSFETs · MPN IRFP451

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage450V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

450V 14A 4V 180W 400mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

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