TI IRFP362

TI · FETs & Power MOSFETs · MPN IRFP362

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)100nC@10V
Output Capacitance(Coss)550pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)97pF
RDS(on)250mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4nF
TypeN-Channel

Technical details

400V 20A 4V 250W 250mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

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