TI IRFP245

TI · FETs & Power MOSFETs · MPN IRFP245

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Specifications

Configuration-
Drain to Source Voltage250V
Gate Charge(Qg)59nC@10V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)340mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

250V 14A 4V 150W 340mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

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