TI IRFP153

TI · FETs & Power MOSFETs · MPN IRFP153

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

60V 34A 4V 80mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

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