TI IRFP140R

TI · FETs & Power MOSFETs · MPN IRFP140R

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)59nC@10V
Output Capacitance(Coss)550pF
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)77mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.275nF
TypeN-Channel

Technical details

100V 31A 4V 180W 77mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

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