TI IRFF9222

TI · FETs & Power MOSFETs · MPN IRFF9222

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)2.4Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)350pF
TypeP-Channel

Technical details

200V 2A 4V 20W 2.4Ω@10V 1 P-Channel P-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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