TI IRFF9132

TI · FETs & Power MOSFETs · MPN IRFF9132

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)400mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)500pF
TypeP-Channel

Technical details

100V 5.5A 4V 400mΩ@10V 1 P-Channel P-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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