TI · FETs & Power MOSFETs · MPN IRFF9130
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| RDS(on) | 300mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 500pF |
100V 6.5A 4V 25W 300mΩ@10V 1 N-channel TO-205AF(TO-39) Single FETs, MOSFETs RoHS