TI IRFF9122

TI · FETs & Power MOSFETs · MPN IRFF9122

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)800mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)300pF
TypeP-Channel

Technical details

100V 3.5A 4V 20W 800mΩ@10V 1 P-Channel P-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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