TI IRFF433

TI · FETs & Power MOSFETs · MPN IRFF433

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Specifications

Drain to Source Voltage450V
Gate Charge(Qg)30nC@10V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)2.25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

450V 2.25A 4V 25W 2Ω@10V 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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