TI IRFF423

TI · FETs & Power MOSFETs · MPN IRFF423

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage450V
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)300pF
TypeN-Channel

Technical details

450V 1.4A 4V 20W 4Ω@10V 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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