TI IRFF232

TI · FETs & Power MOSFETs · MPN IRFF232

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

200V 4.5A 4V 25W 600mΩ@10V 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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