TI IRFF222

TI · FETs & Power MOSFETs · MPN IRFF222

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Specifications

Configuration-
Gate Charge(Qg)15nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)450pF

Technical details

200V 3A 4V 20W 1.2Ω@10V 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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