TI · FETs & Power MOSFETs · MPN IRFF213
No reviews yet — be the first to review TI IRFF213.
| Gate Charge(Qg) | 7.5nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 15W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 135pF |
| Type | N-Channel |
150V 1.8A 4V 15W 2.4Ω@10V 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs