TI IRFF111

TI · FETs & Power MOSFETs · MPN IRFF111

No reviews yet — be the first to review TI IRFF111.

Specifications

Gate Charge(Qg)7.5nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation15W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)135pF
TypeN-Channel

Technical details

80V 3.5A 4V 15W 600mΩ@10V 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs

Related FETs & Power MOSFETs