TI IRFD310

TI · FETs & Power MOSFETs · MPN IRFD310

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)-
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)400mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)3.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)135pF
TypeN-Channel

Technical details

400V 400mA 4V 1W 3.6Ω@10V 1 N-channel N-Channel DIP-4 Single FETs, MOSFETs

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