TI · FETs & Power MOSFETs · MPN IRFD220
No reviews yet — be the first to review TI IRFD220.
| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 800mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 800mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 450pF |
| Type | N-Channel |
200V 800mA 4V 1W 800mΩ@10V 1 N-channel N-Channel DIP-4 Single FETs, MOSFETs