TI · FETs & Power MOSFETs · MPN IRFD210
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| Gate Charge(Qg) | 7.5nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 600mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 1.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 135pF |
| Type | N-Channel |
200V 600mA 4V 1W 1.5Ω@10V 1 N-channel N-Channel DIP-4 Single FETs, MOSFETs