TI · FETs & Power MOSFETs · MPN IRFD1Z3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 3nC@10V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 400mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 3.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 50pF |
| Type | N-Channel |
60V 400mA 4V 3.2Ω@10V 1 N-channel N-Channel DIP-4 Single FETs, MOSFETs