TI · FETs & Power MOSFETs · MPN IRFD122
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 15nC |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 1.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 450pF |
100V 1.1A 4V 1W 400mΩ@10V 1 N-channel N-Channel DIP-4 Single FETs, MOSFETs