TI · FETs & Power MOSFETs · MPN IRFD121
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 1.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 300mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 450pF |
| Type | N-Channel |
80V 1.3A 4V 1W 300mΩ@10V 1 N-channel N-Channel DIP-4 Single FETs, MOSFETs