TI · FETs & Power MOSFETs · MPN IRFD111
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 7nC@10V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 800mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 135pF |
| Type | N-Channel |
80V 1A 4V 800mΩ@10V 1 N-channel N-Channel DIP-4 Single FETs, MOSFETs