TI IRFBC42

TI · FETs & Power MOSFETs · MPN IRFBC42

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)1.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

600V 5.4A 4V 125W 1.6Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs

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