TI · FETs & Power MOSFETs · MPN IRFBC40R
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 6.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
600V 6.2A 4V 125W 1.2Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs