TI · FETs & Power MOSFETs · MPN IRF9632
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 170pF |
| Current - Continuous Drain(Id) | 5.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 550pF |
| Type | P-Channel |
200V 5.5A 4V 1.2Ω@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs