TI IRF9541

TI · FETs & Power MOSFETs · MPN IRF9541

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Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)550pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
RDS(on)200mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.1nF
TypeP-Channel

Technical details

80V 19A 4V 150W 200mΩ@10V 1 P-Channel P-Channel TO-220-3 Single FETs, MOSFETs

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