TI IRF9522

TI · FETs & Power MOSFETs · MPN IRF9522

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)22nC
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)800mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)200pF
TypeP-Channel

Technical details

100V 5A 4V 800mΩ@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs

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