TI · FETs & Power MOSFETs · MPN IRF9512
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 20W |
| RDS(on) | 1.6Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 180pF |
| Type | P-Channel |
100V 2.5A 4V 20W 1.6Ω@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs