TI · FETs & Power MOSFETs · MPN IRF841
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 450V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 1.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.225nF |
| Type | N-Channel |
450V 8A 4V 125W 1.1Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs