TI IRF821

TI · FETs & Power MOSFETs · MPN IRF821

No reviews yet — be the first to review TI IRF821.

Specifications

Drain to Source Voltage450V
Gate Charge(Qg)18nC@10V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)360pF
TypeN-Channel

Technical details

450V 2.5A 4V 50W 3Ω@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs

Related FETs & Power MOSFETs