TI IRF743

TI · FETs & Power MOSFETs · MPN IRF743

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Specifications

Configuration-
Gate Charge(Qg)63nC@10V
Drain to Source Voltage350V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.25nF

Technical details

350V 4V 550mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs

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