TI · FETs & Power MOSFETs · MPN IRF741
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| Gate Charge(Qg) | 63nC |
|---|---|
| Drain to Source Voltage | 350V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 550mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.25nF |
| Type | N-Channel |
350V 4V 550mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs