TI IRF730U

TI · FETs & Power MOSFETs · MPN IRF730U

No reviews yet — be the first to review TI IRF730U.

Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation5.5W
RDS(on)1Ω@10V
Reverse Transfer Capacitance (Crss@Vds)26pF
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

400V 5.5A 4V 5.5W 1Ω@10V N-Channel Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs