TI · FETs & Power MOSFETs · MPN IRF647
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 275V |
| Gate Charge(Qg) | 59nC@10V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 69pF |
| RDS(on) | 340mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
| Type | N-Channel |
275V 4V 125W 340mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs