TI IRF644

TI · FETs & Power MOSFETs · MPN IRF644

No reviews yet — be the first to review TI IRF644.

Specifications

Drain to Source Voltage250V
Gate Charge(Qg)59nC@10V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

250V 14A 4V 125W 280mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs

Related FETs & Power MOSFETs