TI · FETs & Power MOSFETs · MPN IRF643
No reviews yet — be the first to review TI IRF643.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 150V |
| Gate Charge(Qg) | 64nC@10V |
| Output Capacitance(Coss) | 400pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 220mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.275nF |
150V 16A 4V 125W 220mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs