TI · FETs & Power MOSFETs · MPN IRF626
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| Drain to Source Voltage | 275V |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 3.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 1.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 340pF |
| Type | N-Channel |
275V 3.8A 4V 1.1Ω@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs