TI IRF623R

TI · FETs & Power MOSFETs · MPN IRF623R

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
RDS(on)1.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)450pF
TypeN-Channel

Technical details

150V 4A 4V 1.2Ω@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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