TI · FETs & Power MOSFETs · MPN IRF614
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
250V 2A 4V 20W 2Ω@10V 1 N-channel TO-220AB Single FETs, MOSFETs