TI IRF543

TI · FETs & Power MOSFETs · MPN IRF543

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)59nC@10V
Output Capacitance(Coss)550pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.45nF
TypeN-Channel

Technical details

80V 25A 4V 150W 100mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs

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