TI · FETs & Power MOSFETs · MPN IRF541
No reviews yet — be the first to review TI IRF541.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 80V |
| Gate Charge(Qg) | 59nC@10V |
| Output Capacitance(Coss) | 550pF |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 77mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.45nF |
80V 28A 4V 150W 77mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs