TI · FETs & Power MOSFETs · MPN IRF512
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| Gate Charge(Qg) | 7.7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 5.6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 43W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 740mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 135pF |
| Type | N-Channel |
100V 5.6A 4V 43W 740mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs