TI · FETs & Power MOSFETs · MPN IRF351
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| Drain to Source Voltage | 350V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8pF |
| Type | N-Channel |
350V 15A 4V 150W 400mΩ@10V 1 N-channel N-Channel TO-3 Single FETs, MOSFETs